LINCOLN, MA, June 13, 2019 — Marquis Who's Who, the world's premier publisher of biographical profiles, is proud to present Theodore Carter Harman with the Albert Nelson Marquis Lifetime Achievement Award. An accomplished listee, Mr. Hartman celebrates many years' experience in his professional network, and has been noted for achievements, leadership qualities, and the credentials and successes he has accrued in his field. As in all Marquis Who's Who biographical volumes, individuals profiled are selected on the basis of current reference value. Factors such as position, noteworthy accomplishments, visibility, and prominence in a field are all taken into account during the selection process.
Formally retired in 2009, Mr. Harman devoted more than five decades to his career as a physicist and researcher. He spent the bulk of his professional years with the Lincoln Laboratory at the Massachusetts Institute of Technology (MIT) in Lexington, Massachusetts, between 1959 and 2009, serving as a senior staff member and assistant group leader. Additionally, Mr. Harman acted as editor of the Journal of Electronic Materials, and he committed a year to the Defense Project Research Agency of the U.S. Department of Defense in Washington as program manager from 1965 to 1966. Earlier, he was a project leader at the Battelle Memorial Institute in Columbus, Ohio, from 1953 to 1958.
Inspired by Albert Einstein, Mr. Harman endeavored to work in the field of science and research since he was a young man. He attended Manchester College and attained a Bachelor of Arts in physics, chemistry, and mathematics in 1951. He also holds a Master of Science in physics from Purdue University, which he earned in 1953.
Mr. Harman has experienced a number of notable professional milestones over the years. In 1954, he purified indium antimonide and, to his surprise, measured a sample with a carrier concentration of 9XE14 cm3 and a carrier mobility of 500000 cm2/v-sec. At the time, it was generally believed that inter metallic compounds would be of limited use for applications due to their high carrier concentration, i.e. Pb salts at the 1XE16 cm3 level. Mr. Harman also invented a thermoelectric figure of merit measurement technique, identified as the Harman method. He secured numerous patents in his field between 1961 and 2005, involving quantum dot thermoelectric materials and devices and a thermoelectric device test structure.
Mr. Harman co-authored “Thermoelectric and Thermomagnetic Effects” with J.M. Honig in 1967, “Narrow Gap Semiconductors” with I. Melngailis in 1974 and “Physics and Chemistry of II-VI Compounds” with several co-authors in 1967. He has contributed articles to scholarly journals on the preparation and properties of compound semiconductors, including high purity indium antimonide, liquids, and solidus lines in semiconductors.
A celebrated Marquis listee, Mr. Harman was cited in the 1st edition of Who's Who in Science and Engineering and the 24th edition of Who's Who in the East.
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